Abstracts Book - IMRC 2018

• SD7-P059
PHYSICAL PROPERTIES OF CuO AND Cu2O NANOLAYERS GROWN
ON SILICON SUBSTRATES OBTAINED BY THERMAL COPPER
OXIDATION
Jose Eladio Flores Mena 1 , Joel Diaz Reyes 2 , Miguel Galvan Arellano 3
1 Benemerita Universidad Autonoma de Puebla, Facultad de Ciencias de la Electronica, Mexico.
2 Instituto Politécnico Nacional - IPN, Centro de Investigaciones en Biotecnologia Aplicada,
Mexico. 3 Centro de Investigación y de Estudios Avanzados del IPN - CINVESTAV, Departamento
de Ingenieria Electrica, Mexico.
CuO and Cu 2 O layers of nanometric thicknesses on silicon substrate were grown
by thermal oxidation technique. The CuO layers were obtained at a temperature
of 200ºC, whereas that for the phase of the Cu 2 O was necessary to use a higher
oxidation temperature, 500ºC. The copper layers deposited on crystalline silicon
by autocatalysis using watery solutions of CuSO 4 and Hydrofluoric acid. The
thicknesses of the copper oxide layers are in the range from 30 to 150 nm. In
the characterization of the layers of oxidized copper and of cuprous oxide
different techniques were used: In order to examine the surface morphology of
the layers was used atomic force microscopy (AFM) and for the identification of
the different crystalline phases was used X-rays diffraction, in addition their
optical properties measured by ellipsometry.
Acknowledgment:
J. E. Flores-Mena, thank BUAP (proyect PRODEP 511-6/17-5295) for their support
for the development of this work.
Keywords: semiconductors growth, Cu-O semiconductors, thermal oxidation
technique
Presenting authors email: eflores@ece.buap.mx