Abstracts Book - IMRC 2018

• SA5-O012 Invited Talk
MAGNETRON PLASMA TUNING FOR SELECTIVE GROWTH OF
DESIRED MATERIAL
Tiberiu Minea 1 , Felipe Cemin 2 , Martin Rudoph 2 , Daniel Lundin 3 , Grégory Abadias 4 , Fernando
Alvarez 5
1
Université Paris Sud - Paris 11, LPGP : CNRS - Université Paris-Sud - Unievrsité Paris-Saclay,
France. 2 Université Paris Sud - Paris 11, LPGP : CNRS - Université Paris-Sud - Univesrité Paris-
Saclay, France. 3 CNRS, LPGP : CNRS - Université Paris-Sud - Univesrité Paris-Saclay, France.
4 CNRS, Institut Pprime, Département Physique et Mécanique des Matériaux, France.
5 Universidade Estadual de Campinas, Instituto de Física Gleb Wataghin, Brazil.
Over the last two decades High Power Impulse Magnetron Sputtering (HiPIMS) has
emerged as one of the most promising among the Ionized Physical Vapor
Deposition (IPVD) technologies. Indeed, HiPIMS is often reported to improve the
compactness and the crystalline structure of the grown film, and, much more
interesting, to significantly increase the deposition rate in compound mode in the
case of reactive PVD. The aim of the present contribution is to underline the
necessity of understanding the role of precursors in material structuring by
combining plasma analysis with thin film characterization in order to suitable tune
the deposition process. Three recent optimized materials – one pure metal (Cu) and
two compounds (TiO 2 and TaNO) – are used as case study for the potential of
magnetron sputtering. First, HiPIMS can be successfully used as epitaxial process of
copper, and contrarily to wide spread ideas, the very high energy (> 120 V) ion
assistance of the film reduces drastically the stress. The electrical conductivity of
such a material reaches halh of the bulk value for ultra-thin films (< 100 nm),
equivalent to filtered arc deposited films. Second, HiPIMS can be tuned to grow
pure anatase metastable phase of TiO 2 in reactive mode operation, when up to now
only rutile has been reported by HiPIMS. Moreover, the deposition rate is highly
increased compared to conventional direct current magnetron. Finally, Ta 3 N 5 can
be optimally synthetized only adding an axial magnetic field to the conventional
magnetron configuration which guides ionic species the negative glow onto the
growing film, increasing their flux but not their energy. Moreover, the surface of
such prepared films is nanostructured. In conclusion, based on these examples, the
enhanced magnetron technology is an excellent process for optimizing thin films in
several applicative fields like ultra-thin films, high conductive layers, energy relevant
materials for photocatalysis or photoelectrolysis, tribology, hardness, etc.
Keywords: HiPIMS, magnetron sputtering, thin films
Presenting authors email: tiberiu.minea@u-psud.fr