Abstracts Book - IMRC 2018

• SB4-P023
SYNTHESIS AND CHARACTERIZATION OF ZnO THIN FILMS BY CVD
TECHNIQUE FOR THE DEVELOPMENT OF FET TRANSISTORS
Antonio Gallardo 1 , Alicia Vera Marquina 1 , Dainet Berman Mendoza 1 , Jose R Noriega 1 , Rafael
Garcia Gutierrez 1 , Ricardo Rangel 2 , Antonio Ramos Carrazco 1
1
Universidad de Sonora, Departamento de Investigación en Fisica, Mexico. 2 Universidad
Michoacana de San Nicolás de Hidalgo, Facultad de ingenieria quimica, Mexico.
The zinc oxide (ZnO) is a semiconductor material with a wide direct band-gap
(3.37 eV) and high value exciton binding energy (60 meV), making it a promising
candidate for the design of thin film transistor (TFT). Besides this material have
excellent optical properties, photoelectric and piezoelectric with application in
visual screens, varistors and gas sensors. In this work, the synthesis of ZnO
grown on SiO2/Si substrates by a homemade CVD system is reported. This
semiconductor was deposited using metallic zinc as precursor and ultra-high
purity oxygen. A factorial design experiment was employed to analyze the main
parameters of the growth procedure. The samples were characterized by
photoluminescence (PL), cathodoluminescence, scanning electron microscope
(SEM), Raman spectroscopy and X-ray diffraction (XRD). The PL characterization
shows the near band emission (NBE) and the green emission at 383 nm and 508
nm, respectively. In order to compare the optical response, the results CL
spectra were performed for this oxide at room temperature. The characteristic
Raman peaks for the ZnO are reported. The SEM images show the morphology
of the ZnO samples with varied structures such as rods, wires and islands.
Finally, the crystalline structure of the samples was identified using XRD
patterns. The I-V curves of a FET transistor based on a ZnO layer and a SiO2/Si
substrate are presented.
Acknowledgment:
The authors express our Acknowledgments to the Universidad de Sonora
(Unison) and to the laboratorio nacional de nanofabricación nanoFAB (UNISON).
This work was supported by CONACyT Mexico, Project No 242508.
Keywords: ZnO, Chemical vapor deposition, transistor
Presenting authors email: antonio.ramos@unison.mx