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Abstracts Book - IMRC 2018

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• SB4-P020<br />

GROWTH AND REACTION MECHANISM OF ALUMINIUM DOPED<br />

ZINC OXIDE NANOSHEETS ON ALN SEED LAYER FOR FLEXIBLE<br />

AND WAFER SUBSTRATES.<br />

Edgardo Uriel León Salguero 1 , Josefina Alvarado Rivera 1 , Frank Güell 3 , Gonzalo Murillo 2<br />

1 Universidad de Sonora, Posgrado en Nanotecnologia, Mexico. 2 nstituto de Microelectrónica de<br />

Barcelona (IMB-CNM, CSIC), Department of Nano and Microsystems, Spain. 3 Universitat de<br />

Barcelona, Departament de electronica, Spain.<br />

Aluminium doped ZnO, ZnO:Al (AZO) maintains most of the favorable<br />

characteristics of ZnO such as low toxicity, low-cost synthesis and transparency<br />

in the visible region for thin films applications. The improved electrical and<br />

optical properties of AZO make it as a more economical alternative to ITO<br />

(Indium Tin Oxide) with comparable performance, while depending of dopant<br />

percentage its piezoelectric performance seems to improve, due to the mild<br />

hydrothermal method used to synthetize it, it can be deposited on both flexible<br />

and wafer substrates, making it a strong candidate for wearable electronics due<br />

to its very low toxicity (ZnO being used even in skin care products). This work<br />

proposes to analyze the mechanism of ZnO NS as well AZO NSs growth over AlN<br />

seeded substrates in which, most of the AlN participates as reagent in the<br />

growth of AZO NSs. A part of the AlN is dissociated and some is integrated into<br />

the NSs, effectively doping them. The remaining AlN is dissolved in the growth<br />

solution during the synthesis process. A uniform forest of high aspect-ratio NSs<br />

and even higher volume to area ratio material is generated. This ZnO<br />

nanostructures grow with NS geometry, integrating part of the aluminum ions<br />

into the ZnO wurtzite lattice substitutionally. We analyze it by PL, SEM, EDS, XRD<br />

and XPS. Confirming doping and suggesting the proposed growth mechanism.<br />

Acknowledgment:<br />

We express gratitude to Instituto de Microelectronica de Barcelona – Centro<br />

Nacional de Microelectronica (CNM-IMB), and the Universitat de Barcelona for<br />

the use of their installations and all the support, Programa Nacional de Becas<br />

Mixtas of Consejo Nacional de Ciencia y Tecnologia (CONACYT) for financial<br />

support.<br />

Keywords: AZO, aluminium doped zinc oxide, growth mechanism<br />

Presenting authors email: eleonsal@hotmail.com

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