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Abstracts Book - IMRC 2018

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• SC4-P033<br />

SOLAR CELL EFFICIENCY IMPROVEMENT EMPLOYING<br />

PHOTOLUMINESCENT SI AND ZNO QD MULTILAYERED FILMS<br />

Alejandra Cordova Rubio 1 , Rosendo Lopez Delgado 2 , Aldo Zazueta Raynaud 1 , Arturo Ayon 2 ,<br />

Mario Enrique Alvarez Ramos 1<br />

1<br />

Universidad de Sonora, Departamento de fisica, Mexico. 2 The University of Texas at San<br />

Antonio, Department of Physics and Astronomy, United States.<br />

In recent years, solar cells have typically been made of silicon because the<br />

efficiency that these photovoltaic devices present is relatively high. However, it<br />

has some limitations in the range of energies of photon absorption because only<br />

photons with energy greater than the bandgap can be absorbed by the material.<br />

Since the effective response of a silicon solar cell comprises the range of 600 to<br />

900 nm, a non-negligible portion of the solar spectrum is not utilized for photon<br />

absorption. The aforementioned shortcoming could be addressed by using<br />

photoluminescent quantum dots that exhibit a Stokes shift as a method to<br />

improve the spectral response of short wavelength photons in silicon solar cells<br />

by absorbing photons in the range of 300-450 nm and re-emitting in the range<br />

of 500-600 nm where the device exhibits a better response. Quantum dots (QD)<br />

are semiconductor structures that confine charge carriers to a nanoscale region<br />

that are described by quantum mechanics, exhibit different behavior compared<br />

to bulk materials because the surface/volume ratio affects their physical and<br />

chemical properties, their electronic properties are strongly related to its size<br />

and by varying their size it is possible to obtain emission in different<br />

wavelengths. Thus, judiciously employed, the ability of quantum dots (QDs) to<br />

absorb high energy photons and emit photons with lower energy could be<br />

exploited to increase the efficiency of solar cells. We report the synthesis and<br />

characterization of silicon (Si) and zinc oxide (ZnO) quantum dots (QDs), that<br />

exhibit down-shifting photoluminescent characteristics, and their deployment<br />

on photovoltaic devices. The thickness of photoluminescent coatings for silicon<br />

solar cells was theoretically optimized to reduce reflectivity and experimentally<br />

verified for a variety of configurations, including single-layer and double-layer<br />

coatings. It is possible to make variations in concentration and thickness to<br />

optimize this result. The combined effect of the coatings led to an increase in<br />

energy conversion efficiency (PCE) of around 14.86% to 15.5%. These increases<br />

represent improvements of around 6.4% of the power conversion efficiency<br />

(PCE) of the photovoltaic devices used.

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