Abstracts Book - IMRC 2018

• SF2-P042
INFLUENCE OF BORE DOPING ON THE STRUCTURAL AND OPTICAL
PROPERTIES OF INDIUM SULFIDE THIN FILMS PREPARED BY
CHEMICAL BATH DEPOSITION
Paola Elideth Rodríguez Hernández 1 , José Santos Cruz 1 , Enrique Campos Gonzalez 1 , J. G.
Quiñones Galván 2 , Rodrigo Velázquez Castillo 3 , Francisco de MouFlores 1
1 Universidad Autónoma de Querétaro, Química, Mexico. 2 Universidad de Guadalajara, Física,
Mexico. 3 Universidad Autónoma de Querétaro, Ingenieria, Mexico.
Nowadays, energy production trough solar cells is an important field to work.
Within development of photovoltaic devices, alternatives have been found for
cost reduction, one of them is thin film technique which lead to obtained devices
using a lot of material. In order to create non-toxic solar cells, some
semiconductor compounds have been studied. Indium sulfide is an admissible
option due to its stability, transparency and wide band gap, between 2.0 and 2.9
eV. On the other hand, doping of materials can enhance the properties of a
material, allowing in this way the goals could be possible. In the present work
indium sulfide thin films were doped with bore at 60 °C and 180 minutes using
chemical bath deposition technique. Structural and optical properties were
evaluated in function of dopant concentration. Characterization included
Raman spectroscopy, photoluminescence spectroscopy, X-Ray Photoelectron
Spectroscopy and Scanning Electron Microscopy.
Acknowledgment:
The financial support FONDO SECTORIAL CONACYT-SENER-SUSTENTABILIDAD
ENERGÉTICA through CeMIE-sol, within of the strategic project number 37;
“Development of new photovoltaic devices and semi-superconductor materials”
is acknowledged. Also, for the technical support of Marcela Guerrero, A. Garcia-
Sotelo and Michael Morales Luna (the Physics Department, CINVESTAV-IPN).
Keywords: Doping materials, Indium sulfide thin films, Chemical Bath Deposition
Presenting authors email: p-rodriguez89@hotmail.com