Abstracts Book - IMRC 2018

layer. For InN layers, mapping of Nitrogen “N-K” was challenging and ambiguous
because of the overlapping between In-M edge (443 eV), N-K edge (401 eV) and
a large carbon background (284 eV). We continue to explore the processing
envelope, namely by studying growth at lower temperatures, and using different
plasma processing techniques, which could enhance nitrogen incorporation.
Acknowledgment:
The authors acknowledge the research funding support of McMaster University
and the Natural Sciences and Engineering Research Council of Canada (NSERC)
Discovery Grant program, the Canadian Foundation for Innovation, which
supports Electron Microscopy and the Canadian Centre for Electron Microscopy.
Keywords: 2-D materials, Microscopy, Growth
Presenting authors email: bassimn@mcmaster.ca