Abstracts Book - IMRC 2018

• SA5-P027
CHARACTERIZATION OF SILICON OXIDE FILMS OBTAINED BY
HFCVD TECHNIQUE USING TEOS AND SBA-15 AS SOURCE OF
ATOMS
Iván Enrique García Balderas 1 , Crisoforo Morales Ruiz 1
1 Benemerita Universidad Autonoma de Puebla, CIDS-ICUAP, Mexico.
Silicon oxide films were obatined by “hot filament chemical vapour deposition”
(HFCVD) technique, such depositions were made employing two different
methods, one consisted only in using TEOS and the other in using SBA-15 and
TEOS as source of atoms.
The SBA-15 is a silicon oxide mesoporous material, its main features are surface
area (1000-1250 m 2 /gr) and pore size (2-50 nm). It is possible to modify such
features by changing synthesis temperature. Because of this, it is possible to
obtain a suitable material according to the requirements of the catalysis
process.
The deposition of the films was made over p-type silicon substrates (100) using
HFCVD technique with filament temperature of 1800°C and substrate
temperature of 300°C with hydrogen flow of 90 sccm. The TEOS was inserted in
the reaction chamber in gaseous state. For these films were used different
characterization techniques, such as: IR, photoluminiscence, ellipsometry, SEM
and EDS for knowing with more accuracy the properties of the obtained
material.
By IR technique, it was possible to observe the presence of the Si-O bonds in the
films, which showed that the material was composed of SiO2. By
photoluminiscence technique, it was posssible to observe an emission in the
red-IR range, which is chracteristic of silicon, the films that were obtained using
TEOS and SBA-15 as source of atoms showed more intense photoluminiscence
peaks, this was attributed to a larger amount of silicon nanocrystals in the films.
By SEM images, it was possible to observe the formation of spherical
conglomerates in the films distributed uniformly and compactly, which were
attributed to the presence of silicon nanocystals. By EDS technique was
corroborated that the films were composed of silicon and oxygen.