Abstracts Book - IMRC 2018

• SF2-O013
ALL OXIDE NiO-Ga2O3 PN JUNCTION: Ga2O3 LAYER THICKNESS
EFFECT AND APPLICATION AS TEMPERATURE SENSOR AND UV
DETECTOR.
Maria Isabel Pintor Monroy 1 , Bayron Lennin Murillo Borjas 1 , Julia Hsu 1 , Husam Alshareef 2 ,
Manuel A. Quevedo López 1
1 The University of Texas at Dallas, Materials Science and Engineering, United States. 2 King
Abdullah University of Science and Technology, Materials Science and Engineering, Saudi
Arabia.
In an era where new alternatives to silicon-based technology are not just wanted
but needed, new semiconductors have been studied to cover new necessities.
Applications as transparent and flexible electronics have pushed the
development of oxide semiconductors. For devices as transistors, UV
photodetectors and light-emitting diodes, the study and development of a
stable, high performance pn junction is required. However, the lack of a high
performance p-type oxide semiconductor currently limits the oxide technology
to mostly unipolar devices. We will discuss a semi-transparent all-oxide pn
junction deposited at room temperature, which allows its integration in flexible
electronics and in applications where transparency is required. Effect of the
contacts and the thickness of the layer with lower carrier concentration (Ga 2 O 3 )
on the performance of the diode will be discussed. Also, application of the diode
as temperature sensor and UV sensor will be addressed, both of them achieved
due to the wide band gap and high stability of our devices.
Keywords: oxide semiconductors, pn junction, sensor
Presenting authors email: mxp144530@utdallas.edu