Abstracts Book - IMRC 2018

• SA4-P007
LUMINESCENT THIN FILMS BASED ON SILICON OXYCARBIDE
OBTAINED WITH MONOMETHYL-SILANE BY HWCVD TECHNIQUE
Juan Ramon Ramos Serrano 1 , Yasuhiro Matsumot Kuwabara 1,2 , Crisoforo Morales Ruiz 3
1 Centro de Investigación y de Estudios Avanzados del IPN - CINVESTAV, Program of
Nanoscience and Nanotechnology, Mexico. 2 Centro de Investigación y de Estudios Avanzados
del IPN - CINVESTAV, Sección de Electrónica del Estado Sólido, Mexico. 3 Benemerita
Universidad Autonoma de Puebla, Centro de Investigación en Dispositivos Semiconductores,
Mexico.
This work presents a study of the changes in the optical, morphological and
compositional properties of silicon oxycarbide thin films obtained by hot wire
chemical vapor deposition (HWCVD) technique. A mixture of hydrogen, oxygen
and monomethyl-silane (MMS) was used as reactant gas. To decompose the
gases in the reaction chamber a Tantalum wire was used as catalyst at constant
temperature of 1750 °C. The properties of the deposited-films were studied
varying the oxygen flow and the substrate temperature, keeping constants the
hydrogen to MMS flow relation, the chamber pressure and the deposition time.
Changes in the composition of the films were observed in relation to the oxygen
flow through Fourier Transform Infrared spectroscopy (FTIR), ellipsometry and
energy dispersive X-ray spectroscopy (EDS) measurements, while scanning
electronic microscopy (SEM) imagens didnt show significant changes in the
superficial morphologies. Besides, all samples obtained at low oxygen flows
presented a very low emission, while those obtained at higher flow presented a
wide and intense band emission in the visible spectrum centered in the greenblue
region. Additionally, time resolved photoluminescence (TRPL)
measurements were performed. The TRPL results suggest that the emission is
due to a combination of quantum confinement effects and defects related to
SiOx matrix.
Keywords: monomethyl-silane, silicon oxycarbide, visible PL
Presenting authors email: juan.ramos@cinvestav.mx