Abstracts Book - IMRC 2018

• SF2-P052
RANDOM TELEGRAPH NOISE IN SUBMICRON MOS TRANSISTORS
UNDER THE INFLUENCE OF MAGNETIC FIELDS
Oscar Vicente Huerta Gonzalez 1 , Adrian Isrrael Tec Chim 1 , Edmundo A. Gutierrez D. 1
1 Instituto Nacional de Astrofísica, Óptica y Electrónica, Electronica, Mexico.
The increasing demand for enhancements in electronic devices has led to new
technology improvements that pursuit higher performance and lower power
consumption. In this quest, the dimensions of the semiconductor devices are
downscaled to the mesoscopic range, but at the same time they introduce nondesirable
effects. One particular restriction in this area is the emergence of
Random Telegraph Noise (RTN), which is the statistic switching between 2 or
more discrete levels of the drain current or voltage signals in the MOS
transistors. This phenomenon is related to the alternate trapping/detrapping of
charge carriers in one or more defects located inside the oxide or the interface
with the channel. However, there is no agreement on whether or not it is the
unique cause for the appearance of the discrete levels and currently there are
some other interrogations regarding RTN.
In order to go deeper in the comprehension of this behavior, we have
introduced the magnetic field as an additional parameter to the conventional
electric characterization of the RTN signals. The application of the magnetic field
introduces a new dimension that may reveal supplementary information
concerning the nature of the RTN signals. They have been experimentally
characterized in sub-micron MOS transistors under the influence of
perpendicular-to-the-channel “low” magnetic fields at room temperature. By
comparing the signature of the devices affected by RTN in the absence and
presence of the magnetic field, we have observed the emergence of new
discrete levels that may be related to additional defects taking part in the
trapping dynamics, which are exclusively noticeable by the application of the
magnetic field.
Keywords: Random Telegraph Noise, MOSFET, Magnetic Field
Presenting authors email: oscar.huerta@inaoep.mx