Abstracts Book - IMRC 2018

• SA3-P007
FABRICATION AND CHARACTERIZATION OF FIELD EFFECT
TRANSISTOR BASED ON MoS2 SEMICONDUCTOR
Barbara Alejandra Muñiz Martinez 1 , Andres de Luna Bugallo 1
1 Centro de Investigación y de Estudios Avanzados del IPN - CINVESTAV, Materiales, Mexico.
Transition Metal Dicalcogenides (TMDs) are a new family of two dimensional
(2D) materials that present fascinating features when their dimensions are
reduced to a single layer (SL). TMDs based on molybdenum (Mo) have gained
great interest in the development of electronic devices, such as field effect
transistors FETs, due to the dependence of its electronic band structure with the
thickness of the material. In particular, SL-MoS2 and multilayer-MoS2 (ML-MoS2)
FETs show interesting electric properties such as on/off rate, low power
consumption and high mobility over oxide thin layer transistors. In this work, SL-
MoS2 and ML-MoS2 were synthesized on SiO2(300 nm)/Si substrates by chemical
vapor deposition (CVD). Scanning electron microscopy images show that crystal
have triangular shape and length of ~20 µm. The thickness found through
atomic force microscopy (AFM) confirms the presence of monolayers (~7 Å) and
multilayers. Optical characterization was carried out on the samples by means
of Raman and photoluminescence spectroscopies. Raman spectrum of SL shows
the characteristic MoS2 peaks A1g (out of plane) and E2g (in the plane) located at
406.8 cm -1 y 385.3 cm -1 while photoluminescence presents a contribution at 1.81
eV and 1.98 eV corresponding to exciton A and exciton B of SL MoS2. Field effect
transistors microfabrication was performed using e-beam lithography. Titanium
(~100 nm) contacts were deposited by reactive sputtering. The electrical
characterization of the devices was carried out at room temperature. ML-MoS2
FET displays mobilities of 0.42 cm 2 V -1 s -1 and 1.63 cm 2 V -1 s -1 in saturation and
linear region respectively. The on/off ratio of output current is ~10 3 , and the
threshold voltage (Vth) is approximately 1 V.
Acknowledgment:
This work was supported by CONACYT CIENCIA BASICA grant #256874. To
CINVESTAV and CIACYT Laboratorio Nacional UASLP.
Keywords: Molybdenum disulfide (MoS2), Field Effect Transistors (FETs), Chemical
Vapor Deposition (CVD)
Presenting authors email: barbara.muniz@cinvestav.mx