Abstracts Book - IMRC 2018

• SC4-P074
INVESTIGATION ON THE Se ALLOYING WITH CdTe AND THE
EFFECT ON THE OPTO-ELECTRONIC PROPERTIES OF CdTe/CdS
SOLAR CELL
Martin Gregorio Reyes Banda 1,2 , Maria Isabel Pintor Monroy 2 , Eulises Regalado Perez 1 , Manuel
Quevedo 2 , Xavier Mathew 1
1
Instituto de EnergÍas Renovables Universidad Nacional Autónoma de México, Materiales
Solares, Mexico. 2 The University of Texas at Dallas, MSE, United States.
In recent years the efficiency of CdTe/CdS solar cells observed a sudden increase
to above 21% the decade old record of 16.5%, mainly due to the enhancement
in CdTe material properties due to allying with Se, and band gap engineering. In
this work we are presenting our studies on the material properties of the alloy
CdTe1-xSex: influence of Se alloying on structural, electric and electronic
properties. Alloying and elemental diffusion was studied by annealing the stack
CdS/CdSe/CdTe. Devices of the configuration TCO/CdS/CdTe1-xSex/Cu/Au were
fabricated and the opto-electronic properties and EQE were compared with the
reference TCO/CdS/CdTe/Cu/Au device. The SIMS and EQE measurements shed
light into the extent of elemental diffusion and the blue response of the device
respectively. It was observed that Se alloying with CdTe favors short circuit
current, and in addition Voc, h and FF are also improved in comparison with
CdS/CdTe control device. The CdTe/CdS solar cell with a 100nm-CdSe and 90nm-
CdS bilayers showed a notable enhancement in efficiency with respect to the
control sample.
Acknowledgment:
CONACYT Scholarship: 487282. This work was partially supported by the project
CeMIE-Sol P25.
Keywords: CdS/CdSe, CdTe1-xSex, Bilayer Solar cell
Presenting authors email: mgreb@ier.unam.mx