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Abstracts Book - IMRC 2018

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• SF2-O003<br />

STRAIN-INDUCED ELECTRICAL BEHAVIOR IN MANGANESE OXIDE<br />

THIN-FILMS SYNTHESIZED BY THERMAL OXIDATION<br />

Karen Ailed Neri Espinoza 1 , José Alberto Andraca Adame 2 , Roberto Baca Arroyo 3 , Ramón Peña<br />

Sierra 4<br />

1 Instituto Politécnico Nacional - IPN, Programa de Doctorado en Nanociencias y Micro-<br />

Nanotecnlogías, Escuela Nacional de Ciencias Biológicas (ENCB), Mexico. 2 Instituto Politécnico<br />

Nacional - IPN, Unidad Profesional Interdisciplinaria de Ingeniería Campus Hidalgo (UPIIH),<br />

Mexico. 3 Instituto Politécnico Nacional - IPN, Departamento de Electrónica, Escuela Superior de<br />

Ingeniería Mecánica y Eléctrica (ESIME), Mexico. 4 Centro de Investigación y de Estudios<br />

Avanzados del IPN - CINVESTAV, Sección de Electrónica del Estado Sólido, Departamento de<br />

Ingeniería Eléctrica, Mexico.<br />

Manganese oxide thin-films synthesized by thermal oxidation in air atmosphere<br />

conditions has been done. Comparative study of the structure properties<br />

between manganese oxide thin-films on glass substrate and Si (100) substrate<br />

was investigated by X-ray diffraction studies. X-ray diffraction demonstrates that<br />

microstructure formation, phases and lattice distortions as a result of mismatch<br />

between film and substrate can influence the electrical properties of<br />

manganese oxide. Using Si (100) substrate, experimental analysis based<br />

on current-voltage characteristics shows strain-induced electrical behavior<br />

correlated with the structure properties. Further, observed response in the<br />

manganese oxide thin-films can be useful for adaptive oxide electronic devices.<br />

Keywords: Strain-induced behavior, Manganese oxide thin-films, Thermal oxidation<br />

Presenting authors email: neri.karen8@gmail.com

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