Abstracts Book - IMRC 2018

• SC4-P038
ENHANCED PHOTORESPONSE OF METAL-OXIDE-
SEMICONDUCTOR PHOTODETECTOR BY GERMANIUM
NANOCRYSTALS EMBEDDED IN THE SILICON OXIDE LAYER
Jesus Alberto Maldonado Espinosa 1 , Nancy Lizbeth Rodriguez Morales 1 , Juan Carlos Ortiz
Sanchez 1 , Arturo Hernández Hernández 2 , Luis Alberto Hernández Hernández 2 , Eduardo Rangel
Cortes 2 , Emmanuel Vallejo 2 , Francisco Javier Martinez Farias 2 , Pablo A. López Pérez 2 , Miguel
Melendez Lira 3
1 Universidad Autónoma del Estado de Hidalgo, Ingeniería en Nanotecnología, Mexico.
2 Universidad Autónoma del Estado de Hidalgo, Energetic Systems and Advanced Materials,
Mexico. 3 Centro de Investigación y de Estudios Avanzados del IPN - CINVESTAV, Departamento
de Física, Mexico.
Response of single germanium nanocrystalline layer embedded in a silicon
oxide matrix as a two-terminal metal-oxide-semiconductor photodetector is
reported, this in the range 900 nm to 1300 nm at direct and reverse bias
operation. The effect of nanocrystal size on the photocurrent and thus in the
optoelectronic conversion efficiency is analyzed, concluding that this effect can
be explained by a transistor like mechanism. Photocurrent amplification is due
to the inversion layer acts as the emitter and the trapped positive charges in the
dielectric layer assist carrier injection the inversion layer to the contact.
Keywords: Thin films, Nanocrystals, Metal-oxide-semiconductor
Presenting authors email: chicles_1235@hotmail.com