Abstracts Book - IMRC 2018

Where ∈ A(B) is the dielectric constant between the interfaces of the
device, ∂φ/∂z is the spatial derivative of the electrostatic potential evaluated at
the interface t ox , Q total is the effect of fixed oxide charge per unit area, the
energy-dependent interface trap charge and the silicon surface charge per unit
area. The results obtained our model will be compared with experimental data
of a capacitor to corroborate its accuracy, whose oxide thickness varies between
3, 5 and 7 nanometers. With this new methodology, new semiconductor device
parameters can be extracted as well as new designs to optimize their operation
and energy consumption.
Acknowledgment:
This work has been funded by the Mexican Government through CONACyT.
Keywords: INTERFACE TRAP CHARGE, SURFACE CHARGE, MAGNETIC FIELD
Presenting authors email: tecchimadrian@gmail.com