Abstracts Book - IMRC 2018

• SC4-P061
STUDY OF Zn /Si-p HETEROSTRUCTURES BY MODIFYING THE
PROPERTIES OF ZnO FILMS AND THE RESISTIVITY OF SILICON
SUBSTRATES FOR OBTAINING PHOTOVOLTAIC DEVICES
Carlos Bueno 1 , Edith Osorio 2 , René Pérez 1 , Alberto Alvarado 3 , Mauricio Pacio 4 , J. Alejandro
García 1 , Hector Juárez Santiesteban 4
1
Benemerita Universidad Autonoma de Puebla, Facultad de Ingeniería, Mexico. 2 Universidad
de Quintana Roo, Catedra, Mexico. 3 University of Washington, Department of Materials Science
and Engineering, United States. 4 Benemerita Universidad Autonoma de Puebla, Centro de
Investigación en Dispositivos Semiconductores, Mexico.
ZnO films were obtained by the sol-gel method and deposited on p-type silicon
substrates with different resistivities, 0.001, 5 and 1500 ohm-cm by spin coating.
The ZnO films were annealed at 600, 800 and 1000 °C in atmospheres of O2 and
N2, for their crystallization. Aluminum contacts were placed as a back contact
and as a front contact. All the films showed preferential orientation in the plane
(002), having a wurtzite hexagonal structure. The morphological, optical and
electrical properties of the ZnO films show a high dependence on the
environment and the annealing temperature. It is shown that the transport
mechanism of the dominant ZnO/Si-p heterostructure in forward bias is the by
thermionic emission transport and the reverse bias is of current by generation,
except in the heterostructure ZnO/Si-p with substrate Si-p with a resistivity of
0.001 ohms-cm, where it was observed that the structure presents ohmic
characteristics, due to the effects of the tunneling. The results of the
photocurrent show the dependence of the heterostructure with respect to the
width of the depletion region. In the responsivity of the heterostructures, two
regions of photon detection, the visible and UV region, are observed, the
intensity of the response is a function of the location and the width value of the
depletion region. Finally, it is shown that this heterostructure can be used as a
photovoltaic device because its spectrum of responsivity is similar to that of a
Si-c solar cell.
Keywords: heterostructure, Zinc oxide, sol-gel
Presenting authors email: juarezsantiesteban@gmail.com