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Abstracts Book - IMRC 2018

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• SC6-P002<br />

FREQUENCY DOMAIN PHOTOACOUSTIC TECHNIQUE AND THE<br />

TWO LAYERS MODEL: THERMAL CONDUCTIVITY AND THERMAL<br />

DIFUSIVITY DETERMINATION OF P-TYPE POROUS SILICON<br />

Lizbeth Luviano 1 , Uriel Nogal 2 , Joel Hernandez 3 , Jose Bruno Rojas Trigos 1 , Ernesto Marin<br />

Moares 1 , José Antonio Calderón Arenas 1 , Ivan Gabriel Férnandez Peña 1<br />

1 Centro de Investigación en Ciencia Aplicada y Tecnología Avanzada, Legaría, IPN,<br />

Instrumentación y caracterización, Mexico. 2 Consejo Nacional de Ciencia y Tecnologia -<br />

CONACYT, Instituto Politécnico Nacional, Centro de Investigación en Ciencia Aplicada y<br />

Tecnología Avanzada, Unidad Legaria, Mexico. 3 Consejo Nacional de Ciencia y Tecnologia -<br />

CONACYT, Instituto Politécnico Nacional, Centro de Investigación en Ciencia Aplicada y<br />

Tecnología Avanzada, Unidad Legaria., Mexico.<br />

The frequency domain photoacoustic technique (FDPAT) is an important<br />

method for thermal diffusivity determination, which is a thermal parameter that<br />

gives a measure of the heat flow propagates through a medium and it is very<br />

sensitive to the composition and microstructure of materials. In porous<br />

materials, thermal properties depend in addition to, the porous structure and<br />

porosity degree. Here, FDPAT in a heat transmission configuration was used in<br />

order to obtain the values of the effective thermal diffusivity of p-type porous<br />

silicon samples elaborated, by means of electrochemical etching for attack times<br />

10 to 30 min. The two-layer model, based to the concept of effective thermal<br />

resistance for a series two-layer system, was used, together with the results<br />

obtained for the effective thermal diffusivity for each sample, to determinate<br />

the thermal diffusivity and thermal conductivity of porous layer for each sample<br />

as a function of the etching time and the ratio between the thicknesses of the<br />

porous layer to the full sample, and these, the corresponding values of heat<br />

capacity.<br />

Keywords: Photoacustic technique, porous silicon, thermal properties<br />

Presenting authors email: lle-01liz@hotmail.com

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