Abstracts Book - IMRC 2018

• SC4-O008
INFLUENCE OF ANNEALING TEMPERATURE ON NICKEL OXIDE
THIN FILMS DEPOSITED BY CHEMICAL BATH DEPOSITION
Miguel Martinez Gil 1,2 , Maria Isabel Pintor Monroy 3 , Dagoberto Cabrera Germán 1,2 , Marcos Alan
Cota Leal 1,2 , Angelica Garzon 4 , Jorge Alberto Garcia Valenzuela 1,5 , Manuel A. Quevedo López 2,3 ,
Merida Sotelo Lerma 2
1 SMARTER-Lab nucleus for research & divulgation, A.C., , Mexico. 2 Universidad de Sonora,
Departamento de Investigación en Polímeros y Materiales, Mexico. 3 The University of Texas at
Dallas, Department of Materials Science and Engineering, United States. 4 Centro de
Nanociencias y Nanotecnología CNyN-UNAM, , Mexico. 5 Universidad de Sonora, Departamento
de Ingenieria Quimica y Metalurgia, Mexico.
In recent years, there is a great interest on materials such as perovskites for use
in photovoltaics. In this context, we have sought to improve the performance of
perovskite-based devices through the use of layers that help in charge transport,
where we can find the hole-transport-layer, in which materials such as
semiconductor oxides have been used (for example: nickel oxide, copper oxide
and cobalt oxide). This work is about a nickel oxide thin films, simple formulation
based on solutions of nickel sulfate and triethanolamine, the thin films were
obtained via chemical bath deposition. After deposition, the films were
subjected to annealing in an O2/N2 atmosphere for two hours at 200, 300, and
400 °C. X-ray diffraction patterns indicated that the as-deposited NiOx films were
amorphous. After annealing, the NiOx crystallizes into a cubic phase. X-ray
photoelectron spectroscopy analysis confirms the presence of NiOx and the
chemical composition was estimated. The band gap for the NiOx films is
determined between 3.4 and 4.10 eV. Scanning electron micrographs exhibit a
compact deposition and worm-like structure morphology. The thin films
resistivity is found to vary 1.73×10 3 to 0.89×10 6 Ω.cm. Employing Kelvin probe
microscopy and photoemission spectroscopy, the NiOx films present a work
function between 4.70 and 5.48 eV and an ionization energy of ~ 5.6 eV. From
the work function, ionization energy, and the band gap results, we propose a
band diagram for the films at different annealing temperatures and confirm a
p-type conductivity.
Acknowledgment:
The authors acknowledge the financial support the project CONACYT Problemas
Nacionales 2015-01-1739.