Abstracts Book - IMRC 2018

• SF2-P045
EFFECT OF INDIUM CONCENTRATION ON INXGA1-XN
SEMICONDUCTOR ALLOY THIN FILMS GROWN ON SI (111) BY
MOCVD AS A FUNCTION OF SOME THERMODYNAMIC
PARAMETERS.
C. A. Marín García 1 , D. M. Hurtado Casteñeda 1 , J. S. Arias Cerón 2 , V. M. Sánchez R. 1
1 Centro de Investigación y de Estudios Avanzados del IPN - CINVESTAV, Electrical Engineering,
Solid State Electronics Section, Mexico. 2 Centro de Investigación y de Estudios Avanzados del
IPN - CINVESTAV, CONACyT, Electrical Engineering, Solid State Electronics Section, Mexico.
In x Ga 1-x N is a semiconductor alloy which can be used in a wide range of
applications like blue and violet light emitting devices and solar cells for extreme
environments (high temperature and high radiation). One technique that can be
employed to grow thin films with high crystalline quality with this ternary alloy
of two binary compounds is the metalorganic chemical vapor deposition
(MOCVD). Nevertheless, there are some challenges in the growth of this
semiconductor alloy due to large lattice mismatch between InN and GaN and its
miscibility gap which implies a close relationship between thin film crystalline
quality and indium concentration in the ternary semiconductor alloy. In this
work InGaN/GaN thin films have been grown by low pressure metal organic
chemical vapor deposition (LP-MOCVD) using Si (111) as substrate. X-ray
diffraction measurements have been used to evaluate crystalline quality and to
estimate indium concentration using Vegard’s law. The indium concentration
varies between 10 - 20 % and the results have been compared with
photoluminescence measurements. It has been proved the dependence
between indium concentration and some thermodynamic parameters like
partial pressure ratio between metalorganic precursors TMGa/TMIn, reactor
temperature and pressure, among others. Moreover, the Raman spectroscopy
and atomic force microscopy techniques provided information about thin film
stress and surface roughness respectively.
Acknowledgment:
Thanks to CONACyT for its financial support (PNPC) and Electrical Engineering
Department, Solid State Electronics Section, CINVESTAV for its Ph. D. program.
The authors would like to thank D. Ramírez for his technical assistance in the
synthesis of the structures, A. Tavira for his support in X-ray diffraction