Abstracts Book - IMRC 2018

• SF2-P054
PALLADIUM ASSISTED HOMOEPITAXIAL GROWTH OF INAS
NANOWIRE BY MOLECULAR BEAM EPITAXY
Rajagembu Perumal 1 , Sethuramachandran Thanikaikarasan 1 , Thaiyan Mahalingam 2 ,
Subramaniam Velumani 3
1 Saveetha School of Engineering, Saveetha Institute of Medical and Technical Sciences,
Department of Physics, India. 2 Alagappa University, School of Physics, India. 3 Centro de
Investigación y de Estudios Avanzados del IPN - CINVESTAV, Department of Electrical
Engineering, Mexico.
One dimensional nanostructures offer the feasibility of integration with variety of
materials avoiding fundamental growth constraints such as lattice mismatch and
thermal expansion. Several devices are fabricated in this fashion, such as
photodectors, chemical and gas sensors, waveguides and nonlinear optical
converters and so on [1]. We demonstrate the Palladium assisted epitaxial growth
of InAs nanowire using InAs (111) substrates by solid source molecular beam
epitaxy. It is believed that defect free zinc blende InAs nanowires are grown towards
directions [2]. Structural features are analyzed with the help of microscopic
techniques. Growth experiments are carried out to identify the optimized growth
condition by varying catalyst particle density, growth temperature and input V/III
precursor ratio for enhancing the obtained nanowire density [3]. All the studied
growth parameters are significantly influence on the grown nanowires. It is found
to be 15Å thick palladium film provides the favorable catalyst particle size
[4]. Temperature - dependent growth studies show the reasonable density of the
non- orientated nanowires are obtained at 375°C and the variation of the input V/III
precursor ratio suggest that both fluxes significantly affect the growth rate as well
as the density of the harvested nanowires. The morphology of the harvested
nanowires was examined using scanning electron microscope.
1. Ruoxue Yan, daniel Gargas and peidong Yang, Nature Photonics 3, 569 (2009).
2. R.Perumal, Zhixin Cui, Patniarche Gille, Jean-Christophe Harmand and Kanji Yoh,
Semiconductor ScienceTechnology 29,115005 (2014).
3. J. Bubesh Babu and Kanji Yoh, Journal of Crystal Growth 322,10 (2011).
4 Hongyi Xu, Yong Wang, Yanan Guo, Zhiming Liao, Qiang Gao, H. Hoe Tan,
Chennupati Jagadish, Jin Zou, Nano Letters 12,5744 (2012).
Keywords: Nanaostructures, Molecular beam epitaxy, III-V group semiconductors
Presenting authors email: velu@cinvestav.mx Velu