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• SC4-P104<br />

SYNTHESIS OF MOLYBDENUM OXIDE THIN FILMS BY LASER<br />

ABLATION AT DIFFERENT OXYGEN PRESSURES<br />

Ivette Alejandra Ramos Díiaz 1 , Gilberto Gomez Rosas 2 , Dagoberto Cardona Ramírez 1 , Enrique<br />

Camps 3 , Enrique Campos Gonzalez 3 , Miguel Angel Santana Aranda 2 , Jose Guadalupe Quiñones 2<br />

1<br />

Instituto Tecnológico y de Estudios Superiores de Occidente A.C., Departamento de Fisica y<br />

Matematicas, Mexico. 2 Universidad de Guadalajara, Departamento de Fisica, Mexico. 3 Instituto<br />

Nacional de Investigaciones Nucleares (ININ), Departamento de Fisica, Mexico.<br />

Molybdenum oxide (MoOx) is a transition metal-oxide (TMO) with a great<br />

technical interest due to its remarkable optical and electronic properties. MoOx<br />

has the potential to be used in a variety of applications in the field of crystalline<br />

silicon and perovskite solar cells, chemical catalysis applications and hydrogen<br />

separation. Besides TMO can be switch between two different optical states<br />

prompted by photochromic, thermochromic or electrochromic<br />

effect. Molybdenum oxide thin films have been prepared by different methods<br />

such as sol-gel technique, magnetron sputtering, pulsed laser deposition (PLD)<br />

and chemical vapor deposition (CVD). In this work we used the PLD technique to<br />

study the influence of the deposition pressure has on the parameters (mean<br />

kinetic energy and ion density) of the plasma generated by the laser ablation of<br />

Metallic molybdenum in an oxygen atmosphere, in order to optimize and<br />

control the synthesis of MoOx thin films. The results presented in this work are<br />

discussed as a function of the background pressure. For the ablation process, a<br />

Nd:YAG pulsed laser with a wavelength of 1064 nm was focused on the surface<br />

of Mo solid target for 20 minutes. The background gas was a mixture of 80%<br />

argon/ 20% oxygen. The pressure values were of 5 and 10<br />

mTorr. Characterization of the thin films was carried out by Raman<br />

Spectroscopy, Scanning Electron Microscope (SEM), X-Ray Photoelectron<br />

Spectroscopy (XPS), X-Ray Diffraction (XRD) and Ultraviolet-Visible Spectroscopy<br />

(UV-Vis). According to XRD and Raman measurements, the crystalline structure<br />

depends on the pressure, besides XPS results show that the oxidation state in<br />

thin films is also influenced by the deposition pressure.<br />

Acknowledgment:<br />

Sergio Oliva for helping ud with the XRD characterization of MoOx thin<br />

films. Guadalupe Cardenas for helping us with the grazing angle XRD<br />

characterization of MoOx thin films. Ruben Montelongo for helping ud with the

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