Abstracts Book - IMRC 2018

• SC4-P045
GROWTH AND CHARACTERIZATIÓN OF II-VI SEMICONDUCTORS
BY PLD
David Omar Flores Tavira 1 , Jorge Ricardo Aguilar Hernández 1 , Luis Arturo Martinez Ara 1 , Maria
de Los Angeles Hernandez Perez 2 , Patricia Maldonado Altamirano 1 , Rogelio Mendoza Pérez 3 ,
Fray de Landa Castillo Alvarado 1 , Jorge Sastré Hernández 4
1 Escuela Superior de Física y Matemáticas IPN, Departamento de Física, Mexico. 2 Escuela
Superior de Ingeniería Química e Industrias Extractivas, Departamento de Ingeniería en
Metalurgia y Materiales, Mexico. 3 Universidad Autónoma de la Ciudad de México,
Departamento de Física, Mexico. 4 Tecnológico de Monterrey, Escuela de Ingeniería y Ciencias,
Mexico.
Thin CdS and ZnTe films were grown in glass, quartz and silicon substrates by
PLD method. The substrates were heated to 350°C inside of a vacuum chamber
with an environmental pressure of 10E-6 Torr. A pulsed laser (Nd:YAG) with a
wavelength of 1064 nm, 50Hz and 2.4W of power was used to evaporate the
surface of a solid target (CdS and ZnTe tablets), the generated plasma helped in
the material transport the tablet to the substrates. The transmittance spectra
led to calculate the band gap for the ZnTe and CdS samples, obtaining 2.22eV
and 2.41eV respectively. In addition, the X-Ray and Photoluminescence methods
provide a way to associate structural and optical properties to the material.
Specifically by X-ray method, a cubic lattice for ZnTe and a hexagonal lattice for
the CdS were associated. By Scanning Electron Microscopy (SEM) the films were
characterized finding a uniformly distribution in the films surfaces without
Pinholes presence.
Keywords: II-VI Semiconductors, Optical properties, PLD
Presenting authors email: o.f.tavira@gmail.com