Abstracts Book - IMRC 2018

• SB4-O015 Invited Talk
DEVELOPMENT OF SOLUTION-PROCESSED, LOW-TEMPERATURE
HYBRID FILMS FOR DIELECTRIC GATE APPLICATIONS
Rafael Ramirez Bon 1
1 Centro de Investigación y de Estudios Avanzados del IPN - CINVESTAV, Unidad Querétaro,
Mexico.
Nowadays the increasing interest on organic and flexible electronics has
promoted the research on new semiconductors and dielectric materials,
including hybrid organic-inorganic, for their application in electronic devices.
The main constrain imposed by flexible electronics is the low temperature
processing of the materials, which must be compatible with the low temperature
resistance of the plastic substrates. Therefore, although inorganic materials
perform much better in electronic devices, they are discarded for flexible
electronics because of this constrain. On the other hand, organic materials are
inestable, have disordered structure with low mobility and low dielectric
constant in the case of dielectrics, limiting the performance of the devices.
Regarding dielectric applications, organic-inorganic hybrid materials are a new
approach for the development of dielectric materials, which fulfill the demands
of flexible electronics. Hybrid materials consists in the appropriate combination
of organic and inorganic phases in a new class of materials, which take
advantage on the complementary properties of both constituents, allowing for
the design of materials with specific properties. In this work we present a brief
review of the aplications of hybrid dielectric layers as dielectric gate in thin film
transistor. Then, we describe our research on the development of hybrid
dielectric films for gate layer applications in thin film transistors. The low
temperature sol-gel process consist in the simultaneous polimerization of the
organic component and the hydrolysis and condensation of the inorganic one,
which result in the formation of a cross-linked organic-inorganic hybrid network.
By combining different polymers with high k inorganic dielectrics we obtained
different hybrid dielectric systems with properties depending on the organic to
inorganic content ratio. Finally, we describe the most significant results about
the electrical performance of some hybrid dielectric gate layers in thin film
transistors with different semiconductor material as the active layers.
Keywords: DIELECTRICS, HYBRID MATERIALS, TRANSISTORS
Presenting authors email: rrbon@qro.cinvestav.mx