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Abstracts Book - IMRC 2018

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• SB4-O005<br />

CDS THIN FILMS/CDS NPS BY SOFT CHEMISTRY METHODS FOR<br />

TFTS APPLICATIONS<br />

Laura Aislínn Carrasco Chávez 1 , Raúl Agustín Velarde Delgado 1 , María de la Luz Mota<br />

González 1,2 , Francisco Servando Aguirre Tostado 3 , Manuel A. Quevedo López 4 , Amanda Carrillo<br />

Castillo 1<br />

1 Universidad Autónoma de Ciudad Juárez, Instituto de Ingeniería y Tecnología, Departamento<br />

de Ingeniería Eléctrica y Computación, Mexico. 2 Consejo Nacional de Ciencia y Tecnologia -<br />

CONACYT, Instituto de Ingeniería y Tecnología, Departamento de Ingeniería Eléctrica y<br />

Computación, Mexico. 3 Centro de Investigación en Materiales Avanzados, S.C., Unidad<br />

Monterrey, Mexico. 4 The University of Texas at Dallas, Departament of Electrical and Computer<br />

Engineering, United States.<br />

The challenge in the development of thin film transistors (TFTs) is to produce an<br />

appropriate energy barrier between the source and drain contacts so that the<br />

device can be turned off and at the same time generating a gate structure that<br />

can effectively modulate the barrier and can turn on the transistor.<br />

Chalcogenides as semiconductors have been studied as active layers in the<br />

development of devices, in this case Cadmium Sulfide (CdS) as an active layer<br />

has shown a good performance with channel mobility comparable to those of<br />

amorphous silicon [1-4]. ], which is why it has been applied in the development<br />

of TFTs over the last few years, the basic properties, such as its composition,<br />

crystalline phase, morphology, orientation, thickness and microstructure, are<br />

controlled by the deposit conditions and the method used, this results in unique<br />

properties of a material product of a growth process [1- 2]. In this work, a study<br />

was made of thin films of cadmium sulfide (CdS) with nanoparticles of the same<br />

material as the active layer for further applications in the development of TFTs.<br />

The thin film of CdS was deposited by chemical bath deposit, which is a relatively<br />

simple manufacturing process and which handles low deposition temperatures,<br />

layers were made to 1, 2 and 3 chemical baths; the CdS nanoparticles were<br />

synthesized by the precipitation method, they were made at two different<br />

concentrations of their surfactant agent, the SDS concentrations were varied as<br />

sample ‘X’ 2.5 x 10 -3 M and sample ‘Z’ 10 x 10 -3 M. The inclusion of CdS<br />

nanoparticles was performed using the spin coating technique, two series of<br />

thin films of CdS with 1, 2 and 3 chemical baths were made, one layer of CdS X<br />

nanoparticles was deposited and the other series a layer of CdS Z nanoparticles.<br />

Optical properties of thin films of CdS/Nps CdS were analyzed by UV-Vis<br />

spectroscopy; the surface morphology by scanning electron microscopy (SEM),

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