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Abstracts Book - IMRC 2018

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• SF2-P038<br />

FIRST PRINCIPLES STUDY OF THE ANISOTROPY EFFECTS ON THE<br />

ELECTRONIC AND OPTICAL PROPERTIES OF InAs NANOWIRES<br />

Eladio Lopez Lopez 1 , Alejandro Trejo Baños 1 , Marbella Calvino Gallardo 1 , Isabel Iturrios<br />

Santos 2 , Margarita Crisóstomo 2 , Miguel Cruz Irrison 1<br />

1 Instituto Politécnico Nacional - IPN, ESIME Culhuacan, Mexico. 2 Instituto Politécnico Nacional -<br />

IPN, CECYT 8 Narciso Bassols, Mexico.<br />

Recently binary semiconductor nanowires have attracted much attention due to<br />

their enhanced properties compared to their bulk counterparts. Specially InAs<br />

nanowires are of great interest due to their high electron mobility and narrow<br />

band gap for applications in high-frequency electronics and long wavelength<br />

photonics. Although there are some theoretical studies on the properties of InAs<br />

nanowires they seldom study the effect of surface passivation and anisotropy<br />

on their optical properties, which could be crucial for their applications in<br />

optoelectronic devices. In this work, the electronic and optical properties of InAs<br />

nanowires are studied using the first principles density functional theory and<br />

the supercell scheme [1,2], where atoms outside a circumference are removed<br />

in the [001] and [111] directions an otherwise perfect InAs Crystal. The surface<br />

dangling bonds are passivated with H atoms. The results show that the<br />

electronic band gap of the InAs nanowires depend on the ratio between In and<br />

As in the surface, as more As is in the surface the nanowire becomes metallic.<br />

The optical properties are also different between the[111] and [001] nanowires,<br />

since the optical activity of the [111] nanowires begin at lower frequencies<br />

compared to the [001] probably due to their lower quantum confinement. These<br />

results could be important for the application of these nanostructures in<br />

semiconductor devices.<br />

References<br />

1 J. L. Cuevas, F. De Santiago, J. Ramírez, A. Trejo, A. Miranda, L. A. Pérez, and M.<br />

Cruz-Irisson, First principles band gap engineering of [1 1 0] oriented 3C-SiC<br />

nanowires. Computational Materials Science, 142, 268-276 (<strong>2018</strong>).<br />

2 A. González-Macías, F. Salazar, A. Miranda, A. Trejo-Baños, L. A. Pérez, E.<br />

Carvajal, and M. Cruz-Irisson, Lithium effects on the mechanical and electronic<br />

properties of germanium nanowires. Nanotechnology, 29(15), 154004 (<strong>2018</strong>).

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