Abstracts Book - IMRC 2018

• SB4-P027
STUDY OF OPTICAL, MICROSTRUCTURAL AND ELECTRICAL
PROPERTIES FOR MULTIPLE DIP DEPOSITION OF ZnS:Cu FILMS
PREPARED BY CHEMICAL BATH DEPOSITION
Luis Carlos Santana Medina 1 , María de la Luz Mota González 2,3 , Francisco Servando Aguirre
Tostado 4 , Marcela Mireles Ramírez 5 , Priscy Alfredo Luque Morales 6 , Amanda Carrillo Castillo 1
1
Universidad Autónoma de Ciudad Juárez, Instituto de Ingeniería y Tecnología, Departamento
de Ingeniería Eléctrica y Computación, Mexico. 2 Consejo Nacional de Ciencia y Tecnologia -
CONACYT, Instituto de Ingeniería y Tecnología, Departamento de Ingeniería Eléctrica y
Computación, Mexico. 3 Universidad Autónoma de Ciudad Juárez, Instituto de Ingeniería y
Tecnología. Departamento de Ingeniería Eléctrica y Computación, Mexico. 4 Centro de
Investigación en Materiales Avanzados, S.C., Unidad Monterrey, Mexico. 5 Rochester Institute of
Technology, , United States. 6 Universidad Autónoma de Baja California, Facultad de Ingeniería,
Arquitectura y Diseño, Mexico.
In this work, ZnS deposited thin films doped with Cu by chemical bath deposition
at a low temperature (56 °C) were studied. The thin films were deposited on
glass substrates for which the duration and number of dips during the CBD
process were varied; additionally, we also studied the annealing effect. The
optical, morphological, structural and electrical properties of the doped
semiconductor thin films were characterized. The transmission spectra (UV-Vis)
indicated an average transmittance 85 to 90% in the spectral range 300 to 1000
nm for the ZnS and the ZnS:Cu thin films. The absorption edge showed a shift
300 nm on the undoped to 350 nm for the Cu-doped films. The energy band gap
values, calculated by the Tauc method, are in the range 3.7 to 2.1 eV depending
on the annealing treatment, duration and number of dips. The influence of the
annealing process and the number of dips on the surface morphology of the
films was investigated using scanning electron microscopy (SEM).The SEM
micrographs show significant improvement of the uniformity and density with a
increasing duration and number of dips. Likewise, annealing showed to improve
thin film uniformity. The crystalline structure was determined by XRD. The
electrical conductivity increased two orders of magnitude for the ZnS:Cu thin
films compared with the ZnS films. The characteristics of the ZnS:Cu films
presented here make them a suitable candidate for various semiconductor
device applications such as solar cells, light-emitting diodes, biosensors among
other applications with the advantage of a rapid and low-cost deposition
methodology.