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Abstracts Book - IMRC 2018

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• SF2-O028 Invited Talk<br />

FUTURE DIAMOND MOSFETS FOR POWER ELECTRONICS<br />

Richard Jackman 1 , Alexander Pakpour Tabrizi 1<br />

1 University College London, London Centre for Nanotechnology, United Kingdom, Channel<br />

Islands & Isle of Man.<br />

Within its supportive action under program H2020, Europe has recently granted<br />

support to the GREENDIAMOND project, that gathers 14 partners towards the<br />

development of single crystal diamond structures aiming at the fabrication of a<br />

MOSFET power converter. Based on the recent demonstration of a MOS structure<br />

fabricated on diamond 1 , the consortium aims at assembling of a complete<br />

transistor to be used in high voltage applications: target prototypes aim at devices<br />

compatible with 6.5kV and 10kV operating voltages.<br />

The project ultimately aims at the fabrication of high voltage converters that<br />

overtakes Si, SiC and GaN transistor performances in terms of high voltages and<br />

current densities, and compatible with harsh operating environments. The<br />

prototypes to be developed aim at high temperature operations (

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