Abstracts Book - IMRC 2018

• SA3-P014
ON THE POSIBILITY OF PROBING THE TEMPERATURE OF A TWO
DIMENSIONAL ELECRON GAS
Jaime Mimila Arroyo 1
1 Centro de Investigación y de Estudios Avanzados del IPN - CINVESTAV, Electrical Engineering
(SEES), Mexico.
The hetero-structure AlGaN/GaN contains a two dimensional electron gas (TEG)
that spontaneously forms at its interface but completely contained in the GAN
side. This electron gas displas an electron concentration and mobility around
10 13 e-cm -2 and 1000 cm 2 /V-s, respectively. The quasi-triangular potential well
that contains it is about 10 nm wide. As part of a field effect transistor this TEG
is able to handle 1 A/mm of gate width, for a power density of a Mega-Watt/cm 2 .
At such power densities the electron gas temperature should be quite different
from the lattice temperature eve if this is carefully kept at room temperature or
any other. To now it has not been reported a method to determine the two
dimensional electron gas while conducting such high current densities. Here we
propose an experimental way to probe its temperature in an extremely simple
way. Just taking advantage of the High Electron Mobility Transistor (HEMT). We
have found the TEG temperature increases in a way proportional to the square
of the current being handled and that for a current density of 10 6 A-cm -2 , the
TEG temperature is around 500 K. Full details of the procedure to extract the
DDDTEG temperature will be given and discussed in this presentation.
Keywords: Two dimensional e-gas, temperature, AlGaN/GaN
Presenting authors email: jmimila@cinvestav.mx