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Abstracts Book - IMRC 2018

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conservation of AlGaN/GaN interfaces after implementation of a diffusion<br />

barrier layer. The control of electron doses is an essential tool in all above<br />

mentioned TEM investigations.<br />

References:<br />

[1] C. Kisielowski, P. Specht, S.M. Gygax, B. Barton, H.A. Calderon, J.H. Kang, R.<br />

Cieslinski, Micron 68 (2015) 186<br />

Acknowledgment:<br />

Work at the Molecular Foundry was supported by the Office of Science, Office of<br />

Basic Energy Sciences, of the U.S. Department of Energy under Contract No. DE-<br />

AC02-05CH11231.<br />

Keywords: TEM, low dose, performance limiting defects<br />

Presenting authors email: specht@berkeley.edu

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