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Abstracts Book - IMRC 2018

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• SA3-O004<br />

STRONG ELECTRONIC MODULATION ASSISTED BY THE<br />

INTERLAYER ROTATION ANGLE IN GRAPHENE/WS2<br />

Francisco Sanchez Ochoa 1 , Cecilia Noguez 1 , Francisco Hidalgo 1<br />

1 Universidad Nacional Autónoma de México, Solid state department, Instituto de Fisica,<br />

Mexico.<br />

A strong modulation on the electronic properties of graphene (G) interacting<br />

with a two-dimensional (2D) tungsten disulfide (WS2) monolayer is found. This<br />

modulation depends on the relative orientation between monolayers or<br />

interlayer rotation angle. A systematic study was performed using density<br />

functional theory and by unfolding band structure of the hybrid van der Waals<br />

heterostructures. Here, the electronic structure is projected onto the original G<br />

unit cell, such that, the changes in the electronic structure due to the interlayer<br />

interaction can be easily analyzed. It is found at the Fermi level (EF) that the Dirac<br />

cones keep their linear dispersion without the generation of a band gap,<br />

independently of the interlayer rotation angle. However, below EF the band due<br />

to carbon pz atomic orbitals are hybridized with those of WS2, which originates<br />

mini gaps. Also, some resonances are observed that avoid the crossing between<br />

G and WS2 bands. Our findings are in agreement with angle-resolved<br />

photoelectron spectroscopy (ARPES) measurements, where mini gaps were<br />

observed [1-3]. In conclusion, the control of the interlayer angle in hybrid 2D<br />

vdW heterostructures is crucial to design new nanoelectronic and nanophotonic<br />

devices, like thin film transistors and optical modulators with desired properties.<br />

References:<br />

1 Pierucci, D.; et al., Band Alignment and Minigaps in Monolayer MoS2-<br />

Graphene van der Waals Heterostructures. Nano Lett. 2016, 16(7), 4054-4061.<br />

2 Diaz, H. C.; et al., Direct Observation of Interlayer Hybridization and Dirac<br />

Relativistic Carriers in Graphene/MoS2 van der Waals Heterostructures. Nano<br />

Lett. 2015, 15(2), 1135-1140.<br />

3 Le, N. B.; Huan, T. D.; Woods, L. M. Interlayer Interactions in van der Waals<br />

Heterostructures: Electron and Phonon Properties. ACS Appl. Mater. Interfaces<br />

2016, 8(9), 6286-6292.<br />

Keywords: graphene, tungsten disulfie, mini-gaps<br />

Presenting authors email: fsanchez@fisica.unam.mx

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