Abstracts Book - IMRC 2018

• SB4-O017
STUDY OF THE PHYSICAL PROPERTIES OF BI2S3 /PANI THIN FILMS
OBTAINED BY SOLUTION PROCESS FOR ELECTRONIC DEVICES
APPLICATIONS
Brayan German Rivas Valles 1 , Maria de la Luz Mota 2,3 , Francisco Servando Aguirre Tostado 4 ,
Roberto C. Ambrosio Lázaro 5 , Mijung Lee 6 , Amanda Carrillo Castillo 1
1
Universidad Autónoma de Ciudad Juárez, Departamento de Ingeniería Eléctrica y
Computación, Instituto de Ingeniería y Tecnología, Mexico. 2 Consejo Nacional de Ciencia y
Tecnologia - CONACYT, Departamento de Ingeniería Eléctrica y Computación, Instituto de
Ingeniería y Tecnología, Mexico. 3 Universidad Autónoma de Ciudad Juárez, Departamento de
Ingeniería Eléctrica y Computación, Mexico. 4 Centro de Investigación en Materiales Avanzados,
S.C., Unidad Monterrey, Mexico. 5 Benemerita Universidad Autonoma de Puebla, , Mexico.
6 Kookmin University, School of Advanced Materials Engineering, Korea.
Semiconductor materials are highly used in industry and research. Bismuth
sulfide (Bi2S3) has caught researchers’ attention because of his low band gap,
relative abundance and low toxicity. However, its application in electronic
devices has been hindered due to its high resistance. Many alternatives have
been developed, thermal treatments to electron induced modifications. Here,
we have prepared bismuth sulfide thin films by chemical bath deposition
achieving good grain morphology, band gap, and homogenous deposition. We
proposed the use of an organic semiconductor polyaniline (PANI) in order to
enhance the electrical performance of these thin films. We studied the use of
PANI obtained by oxidative polymerization at different oxidation states. Optical
characterization was performed to evaluate the band gap and four point probe
measurements were used to determine the resistivity. SEM micrographs
showed the homogeneous characteristic of the films surface. XDR analysis was
used to determine the structural characteristics. Bi2S3 /PANI thin films are a
suitable candidate for device applications requiring low temperatures for
processing.
Acknowledgment:
To research proyects CB-2013-01 221117 and PN 2016 3529.
Keywords: Bi2S3, Polyaniline, Thin films
Presenting authors email: al131563@alumnos.uacj.mx