Abstracts Book - IMRC 2018

• SC2-P018
APPROXIMATIONS TO DEFECT CHEMISTRY IN Bi4Ti3O12
Carlos Gomez Yanez 1 , María del Carmen Martínez Morales 2 , José Ortiz Landeros 2
1 Instituto Politécnico Nacional - IPN, Metallurgical and Materials Engineering, Mexico. 2 Instituto
Politécnico Nacional - IPN - ESIQIE, Metallurgical and Materials Engineering, Mexico.
Bismuth titanate (Bi4Ti3O12 or BiTO) is known for its high resistance to dielectric
fatigue and relatively large remnant polarization. Owing to these characteristics
it has been applied in FeRAM memory. BiTO is also known to be a potential ionic
conductor. In both applications, crystalline defects play an important role. Thus,
a detailed description of the kind of defects and their concentrations, is
important to improve applications such as ionic conduction and to understand
phenomena like leaking, which is known to occur in BiTO. In this work, a
standard thermochemical equilibrium procedure is used to analyze defect
chemistry in BiTO. The results indicates a strong oxidized state. To obtain a
reduced condition, extremely low oxygen partial pressures and high
temperatures have to be achieved. Results are in agreement with experimental
observations, such as p-type conduction, relatively high ion conduction, and
bismuth volatilization.
Keywords: Defect Chemistry, Bismuth Titanate, Ferroelectric
Presenting authors email: carlos.gomez.extras@gmail.com