Abstracts Book - IMRC 2018

• SC4-O019
PHOTOVOLTAIC STRUCTURES USING CuxSnySz AS AN ABSORBER
MATERIAL.
David Avellaneda 1 , Sadasivan Shaji 2 , Bindu Krishnan 2 , Laura Patricia Rivera Rosas 2
1 Universidad Autónoma de Nuevo León, FIME-CIDET, Mexico. 2 Universidad Autónoma de
Nuevo León, FIME, Mexico.
In recent years, the advances in solar energy and particularly in the materials
used for the absorption of solar radiation have had a very remarkable
development. However, we know that no technology or individual material can
solve the problem; for this reason, efforts in research of new materials as well
as processes to improve existing ones, continue to be carried out by various
research groups. Thin films of the system Cu-Sn-S are promising materials in the
field of photovoltaic. In previous work, we obtained thin films of different phases
of such system: Cu2SnS3, Cu3SnS4 and Cu4SnS4 by thermal evaporation of Cu
layer on SnS thin films and thermal treatments in sulfur atmosphere
(sulfurization process) at temperatures of 400-500 °C. In this work, we report the
rapid thermal annealing of those films, their characterization to determine
changes in structural (Raman/XRD), morphological (AFM/SEM), chemical (XPS),
optical (UV-Vis-NIR) and electrical (IV) properties. The thin films with the best
properties are included in a photovoltaic structure, and the principal properties
will be presented.
Acknowledgment:
The authors are thankful to SEP-CONACYT (Project No. 241022) and CEMIE-Sol
Project 35 (CONACYT-SENER), for financial assistance.
Keywords: Cu2SnS3, Cu3SnS4 and Cu4SnS4, Photovoltaic structures, thin films
Presenting authors email: david.avellanedavl@uanl.edu.mx