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Abstracts Book - IMRC 2018

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• SF2-P011<br />

A METHOD TO CONFIGURE A STANDARD MARKING LASER AS A<br />

LOW-COST PATTERN GENERATOR TO OBTAIN PHOTOMASKS FOR<br />

FABRICATION OF ELECTRONIC DEVICES<br />

Norberto Hernandez Como 1 , Miguel Angel Lopez Castillo 2 , Francisco Javier Hernandez Cuevas 1 ,<br />

Hector Baez Medina 3 , Marco Ramirez Salinas 3 , Miguel Angel Aleman 1<br />

1 Instituto Politécnico Nacional - IPN, Centro de Nanociencias y Micro y Nanotecnologías,<br />

Mexico. 2 Instituto Politécnico Nacional - IPN, Escuela Superior de Ingeniería Química e<br />

Industrias Extractivas, Mexico. 3 Instituto Politécnico Nacional - IPN, Centro de Investigación en<br />

Computación, Mexico.<br />

The photomasks are very useful for the mass production of electronic devices<br />

and integrated circuits with resolution of up to 0.6 um using optical lithography.<br />

Photomasks are normally comprised of a glass substrate (~1-3 mm), followed by<br />

a chrome film (~100 nm) and on top of these two a positive photoresist (~500<br />

nm). Custom circuit designs are normally transferred onto the photomask using<br />

pattern generators (mask writer) with a 405 nm laser. In this work, we configured<br />

a SISMA Big Smarky 200F 20 W marking laser (Yb 1064 nm) as a pattern<br />

generator to produce photomasks with a resolution of up to 10 um. The effect<br />

of the marking laser parameters such as speed, frequency, power and filling<br />

space is discussed in order to produce high quality patterns. Our results indicate<br />

that the photoresist is hardened when exposed to the marking laser, and the<br />

unexposed photoresist is removed during the developing. A power of 8% is<br />

crucial to achieve this annealing effect only on the photoresist and to avoid<br />

permanent damaging on the chrome film and the glass. This produces a result<br />

contrary to the common mask writer equipment where the photoresist exposed<br />

to the 405 nm laser is removed in the developer. Our method can be used to<br />

configure any commercial marking laser into a pattern generator which prices<br />

are normally 1/3 up to 1/5 of commercial pattern generators. The proposed<br />

method is helpful for design testing and fast prototyping of electronic devices.<br />

Acknowledgment:<br />

This work was supported by CONACYT-Mexico under grant CB-2014/240103 and<br />

by SIP-IPN under grant <strong>2018</strong>0533.<br />

Keywords: pattern generator, photolitography, electronic devices<br />

Presenting authors email: nohernandezc@ipn.mx

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