Abstracts Book - IMRC 2018

• SF2-P062
WO3 NANOSTRUCTURES FOR H2 GAS SENSOR
Miriam Sarai Cruz Leal 1 , Oscar Goiz 2 , Carlos Felipe 2,3 , Gerardo Francisco Pérez Sánchez 4 , F.
Chávez 4
1 Instituto Politécnico Nacional - IPN, UPIBI, Mexico. 2 Instituto Politécnico Nacional - IPN,
CIIEMAD, Mexico. 3 Instituto Politécnico Nacional - IPN, , Mexico. 4 Benemerita Universidad
Autonoma de Puebla, Centro de Investigación en fisicoquímica de materiales del instituto de
ciencias, Mexico.
In this work, we report the sensitivity characteristics of WO 3 nanoparticle films
deposited on quartz substrates by HFCVD technique. Previously, gold electrodes
were printed on the quartz substrates by means of thermal evaporation, and
then, WO 3 film was deposited on this substrate to make a sensor device with
structure of substrate/electrodes/WO 3 . The films were characterized by using
TEM, XRD, SEM and Raman spectroscopy.
Depending on the grown time, the thickness of the WO 3 films were between 2.5
to 7 µm with a nanoparticle morphology. XRD shown the films crystallize in
monoclinic phase of WO 3 . By TEM was possible to appreciate a policrystalline
particles with a diameter around of 20 nm. Raman spectroscopy confirms the
phase of WO 3 .
The sensor device was placed into a sensing chamber and tested under different
working temperatures (100, 200, 300 and 400 °C). Different hydrogen
concentration pulses (20, 40 and 80 ppm) were introduced at each working
temperatures, for all the cases, synthetic air was used as carrier gas (50,000
ppm).
The device shown the shortest response time (3 minutes) and recuperation time
(4 minutes) at 400 °C. Under these conditions, the sensitivity were from 1.58 to
2.38 for 20 to 80 ppm, respectively. The device do not shown any response at
100°C. These results are discussed in the present poster.
Acknowledgment:
Proyecto SIP 20181917
Keywords: stability, sensitivity, semiconductor
Presenting authors email: xaraicruz@gmail.com