Abstracts Book - IMRC 2018

• SA6-O011
ROLE OF RADICALS AND IONS IN GAS MAGNETRON DISCHARGES
FOR PREPARATION OF NANOSTRUCTURED THIN FILMS
Petr Pokorny 1 , Michal Novotny 1 , Premysl Fitl 1 , Jindrich Musil 1 , Jiri Bulir 1 , Jan Lancok 1
1 Institute of Physics of the Czech Academy of Sciences, Department of Analysis of Functional
Materials, Czech Republic.
The paper deals with a mass spectrometric characterization of atoms, radicals
and ions in magnetron sputtering discharges generated in Ne, Ar, Kr and Xe
gases. In these discharges different kinds of species such as gas and metal
atoms, radicals, negative and positive ions according to the magnetron target
and kind of sputtering gas used are generated. The amount of individual species
and ion energy distribution functions (IEDF) as a function of the sputtering gas
pressure p and the magnetron power P is investigated in detail. A special
attention is devoted (1) the evolution of amount of single-ionized and doubleionized
gas and metal atoms with increasing p and P, (2) IEDF of gas X + and X ++
ions, and metal Me + and Me ++ ions, (3) the creation of radicals, positive (RG + ) and
negative (RG - ) ions of reactive gases and their combination with noble gases, (4)
the contamination of sputtered metallic films by oxygen and nitrogen a residual
gas atmosphere in the deposition chamber as a function of the film deposition
rate aD; here X + and X ++ and Me + and Me ++ are single- and double- ionized gas
and metal ions, respectively. This investigation was carried out in RF and DCpulsed
magnetron discharges.
Acknowledgment:
This wor kwas supported by the Ministry of Education, Youth and Sports (MEYS)
of the Czech Republic under projects No. LO 1409 and LM2015088 and Czech
Science Foundation under Project No. 17-13427S and GAP18-09347S.
Keywords: magnetron sputtering, inert gases, nanostructured thin films
Presenting authors email: pokornyp@fzu.cz