Abstracts Book - IMRC 2018

• SC4-P085
GROWTH OF CZTS THIN FILMS FOR DESIGN OF SOLAR CELLS
Gustavo Alvarez Suarez 1 , Jairo Gomez Cuaspud 2 , Enrique Vera Lopez 3 , Yaneth Pineda Triana 3 ,
Ivan Calvet 4 , Juan Carda 4
1 Universidad Pedagógica y Tecnológica de Colombia, Electromechanical engineering,
Colombia. 2 Universidad Pedagógica y Tecnológica de Colombia, Chemistry, Colombia.
3 Universidad Pedagógica y Tecnológica de Colombia, Metallurgical Engineering, Colombia.
4 Universitat Jaume I, Chemistry, Spain.
Development of photovoltaic materials, has currently focused on the obtention
of structures of simple composition and low toxicity such as quaternary systems
based on Cu2ZnSnS4 systems (CZTS). Although many of these technologies are
still very expensive, the development of liquid phase and thin film processing
process have allowed the obtention of solar cell materials at very low prices, in
this context, the development of prototypes of thin films for solar cells
supported over ceramic substrates to form conductive layers of
Mo/CZTS/Cds/ITO, permit the production of stable CZTS inks, which can be
deposited as thin films. For this purpose, the present work started
corresponding precursor solutions of Cu(NO3)2, Zn(NO3)2 and Sn(NO3)4 dissolved
in ethanol, which formed a stable ink, which was deposited by chemical bath in
a substrate previously sputtered with metallic molybdenum, in a 200 μm
thickness. The deposited film of CZTS was treated at 300 °C to consolidate a
stable layer of the material and after that treated in a tubular oven at 450 °C for
4 hours under nitrogen flow (50 mL min -1 ). The structural results showed the
presence of a crystalline phase associated with Cu2ZnSn (CZT). Subsequently,
the material was sulphurized in an oven and the XRD results showed that a pure
crystalline phase of CZTS was obtained in the I-42m crystalline system with a =
0.5427, b = 0.5427, c = 1.0848 nm and crystalline orientation along (1 1 2) facet.
The results of the characterization by Raman spectroscopy, demonstrate the
obtaining of a material of composition defined and highly crystalline with
characteristic signals between 250 and 350 cm -1 . The generated film was treated
with a CdS ink dissolved in diethyleneglycol (1:0.05) in a chemical bath, the film
was thermally treated at 450 °C under nitrogen flow and the subsequent layer
of ITO powder were deposited using the same technique. The electrical
characterization determined the effectiveness of the deposit processes and
allowed to determine the flow of current through the different layers for the
generation of electrical energy, creating a difference of potential in DC with
values of 0.15 volts for design of solar cells.