Abstracts Book - IMRC 2018

• SD7-P061
X-RAY RECIPROCAL SPACE MAPPING STUDY ON DOUBLE
HETEROEPITAXIAL AlGaSb STRUCTURE
Gabriel Juarez Diaz 1 , Primavera López Salazar 2 , Javier Martínez Juárez 2 , Alvaro David Hernandez
De la Luz 2 , Angel Rodriguez Victoria 2
1 Benemerita Universidad Autonoma de Puebla, Facultad de Ciencias de la Computación,
Mexico. 2 Benemerita Universidad Autonoma de Puebla, Centro de Investigación en
Dispositivos Semiconductores, Mexico.
X-ray reciprocal space mapping (RSM) and High resolution X-ray diffraction
(HRXRD) were employed for studying Liquid Phase Epitaxy (LPE) growth of
AlGaSb double structure on GaSb (001) with different thickness of the first layer.
Measuring the symmetric 004 diffraction allowed us to separately obtain film
properties of individual layers and to analyze both residual strain and lattice
tilting. In a two-layer structure of AlGaSb, relaxation of the first layer besides is
thickness dependent was increased after the second layer growth. Also, it was
found that the lattice tilting of both layers is similar and increased in the first
layer due to the second growth. We attribute these features to dislocation
extended from the interface between first layer and second layer to substrate.
Keywords: High resolution X-ray diffraction, Heteroepitaxy, Semiconducting III?V
materials
Presenting authors email: j.gabriel@rocketmail.com