Abstracts Book - IMRC 2018

• SF2-P044
EFFECT OF EUROPIUM ON MICROSTRUCTURAL AND OPTICAL
BEHAVIORS OF HYSYCVD-TiO2 SEMICONDUCTORS
Jose Rafael Espinoza Salomon 1 , Ana Lilia Leal Cruz 1 , Alicia Vera Marquina 1 , Rodrigo Melendrez
Amavizca 1 , Alondra Lizbeth Pineda Ojeda 1 , Jesús Alán Pérez Aguirre 1 , Josue A. Aguilar
Martinez 2 , Carlos Zuñiga Islas 3 , Alejandro García Juárez 1
1 Universidad de Sonora, Departamento de Investigación en Física, Mexico. 2 Universidad
Autónoma de Nuevo León, Facultad de Ingeniería Mecánica y Eléctrica, Mexico. 3 Instituto
Nacional de Astrofísica, Óptica y Electrónica, Electronica, Mexico.
In this work, the effect of europium on microstructural and optical behavior of
TiO 2 semiconductors obtained by chemical vapor deposition in hybrid systems
(HYSYCVD) is presented. HYSYCVD-TiO 2 semiconductors were synthesized with
different erbium concentrations (0.0, 0.5, 1.0, 2.5, and 5.0 At. %). Subsequently,
microstructural and optical characterizations were performed by X-ray
diffraction, scanning electron microscopy/dispersive energy X-ray spectroscopy,
and UV-visible spectroscopy. XRD results reveal that polycrystalline Anatase
phase was formed in doped and undoped samples. Crystallite sizes of TiO 2
correspond to 10.75 nm, whereas, for TiO 2 :Eu at 0.5, 1.0, 2.5, and 5.0 At. %
correspond to 11.84, 13.14, 12.92, and 11.93 nm, respectively. Considering that
the europium excess promoted the pyrochlore (Eu 2 TiO 5 ) formation at erbium
concentration up to 1 at. %, it was possible determine the dopant for TiO 2 (2
nanocylinder formation in undoped and doped materials. Also, it is established
that the increase of dopant concentration generates a higher nanocylinder
amount and nanostructure size modifications (thickness decrease and length
increase). Lastly, optical characterizations reveal that undoped and doped
material transmittances are in the range of 72-75 % and of 70-76 % for
wavelengths 400-800 nm, respectively. While, sample absorbances reach the
maximum responses in the wavelength range of 200-380 nm with a greater
response (18-24%) at 250 nm. Additionally, TiO 2 band gap values showed
behaviors inversely proportional to europium concentration, allowing the band
gap modulation between 3.0 to 2.8 eV. Undoped and doped TiO 2 with the
aforementioned characteristics can find potential applications in the
development of optoelectronic devices, such as: solar cells.
Keywords: TiO2:Eu, Solar cells, HYSYCVD
Presenting authors email: JRES1294@gmail.com